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R2109


SI PNP transistor
GFX
UCE/UCB -40/-40V
IC -0.1A
hFE 100-600
Ptot 200mW
fT 200MHz
TJ 150°C
the R2109 is a silicon PNP transistor preferred for use in switching applications, bias resistor build in
Picture: -
Source: KSR2109
Advanced Information for R2109
OEM:Samsung Elec... [more]
Samsung Electronics CO. LTD.
Package: SOT-23
R2109 datasheet (jpg):-
R2109 datasheet (pdf):-
OEM datasheet:-
complementary type:
-
similar type list:
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similar type search:-
search a part:search

R2109


SI PNP transistor
GFX
UCE/UCB -40/-40V
IC -0.1A
hFE 100-600
Ptot 200mW
fT 200MHz
TJ 150°C
the R2109 is a silicon PNP transistor preferred for use in switching applications, bias resistor build in
Picture: -
Source: KSR2109
Advanced Information for R2109
OEM:Samsung Elec... [more]
Samsung Electronics CO. LTD.
Package: SOT-23
R2109 datasheet (jpg):-
R2109 datasheet (pdf):-
OEM datasheet:-
complementary type:
-
similar type list:
-
similar type search:-
search a part:search

R2109


SI PNP transistor
GFX
UCE/UCB -40/-40V
IC -0.1A
hFE 100-600
Ptot 200mW
fT 200MHz
TJ 150°C
the R2109 is a silicon PNP transistor preferred for use in switching applications, bias resistor build in
Picture: -
Source: KSR2109
Advanced Information for R2109
OEM:Samsung Elec... [more]
Samsung Electronics CO. LTD.
Package: SOT-23
R2109 datasheet (jpg):-
R2109 datasheet (pdf):-
OEM datasheet:-
complementary type:
-
similar type list:
-
similar type search:-
search a part:search