R1001 transistor datasheet
 
 
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R1001


SI NPN transistor

Uce/Ucb: 50/50V
Ic: 0.1A
β (Ic/Ib): >20
N: 300mW
F: >250MHz
Tmax: 150°C
the R1001 is a silicon NPN transistor preferred for use in switching applications, bias resistor build in
Picture: -
Source: KSR1001
Advanced Information for R1001
OEM:Samsung Elec... [more]
Samsung Electronics CO. LTD.
Package: TO-92
datasheet (jpg):-
datasheet (pdf):-
complementary type:
-
similar type list:
-
similar type search:-
search a part:search

R1001


SI NPN transistor

Uce/Ucb: 50/50V
Ic: 0.1A
β (Ic/Ib): >20
N: 300mW
F: >250MHz
Tmax: 150°C
the R1001 is a silicon NPN transistor preferred for use in switching applications, bias resistor build in
Picture: -
Source: KSR1001
Advanced Information for R1001
OEM:Samsung Elec... [more]
Samsung Electronics CO. LTD.
Package: TO-92
datasheet (jpg):-
datasheet (pdf):-
complementary type:
-
similar type list:
-
similar type search:-
search a part:search

R1001


SI NPN transistor

Uce/Ucb: 50/50V
Ic: 0.1A
β (Ic/Ib): >20
N: 300mW
F: >250MHz
Tmax: 150°C
the R1001 is a silicon NPN transistor preferred for use in switching applications, bias resistor build in
Picture: -
Source: KSR1001
Advanced Information for R1001
OEM:Samsung Elec... [more]
Samsung Electronics CO. LTD.
Package: TO-92
datasheet (jpg):-
datasheet (pdf):-
complementary type:
-
similar type list:
-
similar type search:-
search a part:search
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