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R2106


SI PNP transistor
GFX
UCE/UCB -50/-50V
IC -0.1A
hFE >68
Ptot 200mW
fT 200MHz
TJ 150°C
the R2106 is a silicon PNP transistor preferred for use in switching applications, bias resistor build in
Picture: -
Source: KSR2106
Advanced Information for R2106
OEM:Samsung Elec... [more]
Samsung Electronics CO. LTD.
Package: SOT-23
R2106 datasheet (jpg):-
R2106 datasheet (pdf):-
OEM datasheet:-
complementary type:
-
similar type list:
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similar type search:-
search a part:search

R2106


SI PNP transistor
GFX
UCE/UCB -50/-50V
IC -0.1A
hFE >68
Ptot 200mW
fT 200MHz
TJ 150°C
the R2106 is a silicon PNP transistor preferred for use in switching applications, bias resistor build in
Picture: -
Source: KSR2106
Advanced Information for R2106
OEM:Samsung Elec... [more]
Samsung Electronics CO. LTD.
Package: SOT-23
R2106 datasheet (jpg):-
R2106 datasheet (pdf):-
OEM datasheet:-
complementary type:
-
similar type list:
-
similar type search:-
search a part:search

R2106


SI PNP transistor
GFX
UCE/UCB -50/-50V
IC -0.1A
hFE >68
Ptot 200mW
fT 200MHz
TJ 150°C
the R2106 is a silicon PNP transistor preferred for use in switching applications, bias resistor build in
Picture: -
Source: KSR2106
Advanced Information for R2106
OEM:Samsung Elec... [more]
Samsung Electronics CO. LTD.
Package: SOT-23
R2106 datasheet (jpg):-
R2106 datasheet (pdf):-
OEM datasheet:-
complementary type:
-
similar type list:
-
similar type search:-
search a part:search