MJ10009 transistor datasheet
 
 
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MJ10009


SI NPN darlington transistor

Uce: 700V
Ic: 20A
β (Ic/Ib): 30-400
N: 175W
F: -
Tmax: 200°C
the MJ10009 is a high power NPN silicon darlington transistor preferred for use in high voltage, high speed power switching applications in inductive circuits where fall time is critical
Picture: -
Source: datasheet
Advanced Information for MJ10009
OEM:Motorola Sem... [more]
Motorola Semiconductor Products Inc.
Package: TO-3
datasheet (jpg):-
datasheet (pdf):-
complementary type:
-
similar type list:
-
similar type search:search similar
search a part:search

MJ10009


SI NPN darlington transistor

Uce: 700V
Ic: 20A
β (Ic/Ib): 30-400
N: 175W
F: -
Tmax: 200°C
the MJ10009 is a high power NPN silicon darlington transistor preferred for use in high voltage, high speed power switching applications in inductive circuits where fall time is critical
Picture: -
Source: datasheet
Advanced Information for MJ10009
OEM:Motorola Sem... [more]
Motorola Semiconductor Products Inc.
Package: TO-3
datasheet (jpg):-
datasheet (pdf):-
complementary type:
-
similar type list:
-
similar type search:search similar
search a part:search

MJ10009


SI NPN darlington transistor

Uce: 700V
Ic: 20A
β (Ic/Ib): 30-400
N: 175W
F: -
Tmax: 200°C
the MJ10009 is a high power NPN silicon darlington transistor preferred for use in high voltage, high speed power switching applications in inductive circuits where fall time is critical
Picture: -
Source: datasheet
Advanced Information for MJ10009
OEM:Motorola Sem... [more]
Motorola Semiconductor Products Inc.
Package: TO-3
datasheet (jpg):-
datasheet (pdf):-
complementary type:
-
similar type list:
-
similar type search:search similar
search a part:search
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