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MJ10007


SI NPN darlington transistor
GFX
UCE 500V
IC 10A
hFE 30-500
Ptot 150W
fT -
TJ 200°C
the MJ10007 is a high power NPN silicon darlington transistor preferred for use in high voltage, high speed power switching applications in inductive circuits where fall time is critical
Picture: -
Source: datasheet
Advanced Information for MJ10007
OEM:Motorola Sem... [more]
Motorola Semiconductor Products Inc.
Package: TO-3
MJ10007 datasheet (jpg):-
MJ10007 datasheet (pdf):-
OEM datasheet:-
complementary type:
-
similar type list:
-
similar type search:search similar
search a part:search

MJ10007


SI NPN darlington transistor
GFX
UCE 500V
IC 10A
hFE 30-500
Ptot 150W
fT -
TJ 200°C
the MJ10007 is a high power NPN silicon darlington transistor preferred for use in high voltage, high speed power switching applications in inductive circuits where fall time is critical
Picture: -
Source: datasheet
Advanced Information for MJ10007
OEM:Motorola Sem... [more]
Motorola Semiconductor Products Inc.
Package: TO-3
MJ10007 datasheet (jpg):-
MJ10007 datasheet (pdf):-
OEM datasheet:-
complementary type:
-
similar type list:
-
similar type search:search similar
search a part:search

MJ10007


SI NPN darlington transistor
GFX
UCE 500V
IC 10A
hFE 30-500
Ptot 150W
fT -
TJ 200°C
the MJ10007 is a high power NPN silicon darlington transistor preferred for use in high voltage, high speed power switching applications in inductive circuits where fall time is critical
Picture: -
Source: datasheet
Advanced Information for MJ10007
OEM:Motorola Sem... [more]
Motorola Semiconductor Products Inc.
Package: TO-3
MJ10007 datasheet (jpg):-
MJ10007 datasheet (pdf):-
OEM datasheet:-
complementary type:
-
similar type list:
-
similar type search:search similar
search a part:search