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LBE2009SA


SI NPN transistor
UCE/UCB 35/40V
IC 0.25A
hFE 15-150
Ptot 3.5W
fT 4GHz
TJ 200°C
the LBE2009SA is a silicon NPN transistor preferred for use in common emitter class A linear power amplifier up to 4GHz
Picture: -
Source: PSC Philips Data Handbook...... [more]
PSC Philips Data Handbook SC08b
Advanced Information for LBE2009SA
OEM:Philips Semi... [more]
Philips Semiconductors
Package:FO-45
LBE2009SA datasheet (jpg):-
LBE2009SA datasheet (pdf):-
OEM datasheet:-
complementary type:
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similar type list:
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similar type search:search similar
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LBE2009SA


SI NPN transistor
UCE/UCB 35/40V
IC 0.25A
hFE 15-150
Ptot 3.5W
fT 4GHz
TJ 200°C
the LBE2009SA is a silicon NPN transistor preferred for use in common emitter class A linear power amplifier up to 4GHz
Picture: -
Source: PSC Philips Data Handbook...... [more]
PSC Philips Data Handbook SC08b
Advanced Information for LBE2009SA
OEM:Philips Semi... [more]
Philips Semiconductors
Package:FO-45
LBE2009SA datasheet (jpg):-
LBE2009SA datasheet (pdf):-
OEM datasheet:-
complementary type:
-
similar type list:
-
similar type search:search similar
search a part:search

LBE2009SA


SI NPN transistor
UCE/UCB 35/40V
IC 0.25A
hFE 15-150
Ptot 3.5W
fT 4GHz
TJ 200°C
the LBE2009SA is a silicon NPN transistor preferred for use in common emitter class A linear power amplifier up to 4GHz
Picture: -
Source: PSC Philips Data Handbook...... [more]
PSC Philips Data Handbook SC08b
Advanced Information for LBE2009SA
OEM:Philips Semi... [more]
Philips Semiconductors
Package:FO-45
LBE2009SA datasheet (jpg):-
LBE2009SA datasheet (pdf):-
OEM datasheet:-
complementary type:
-
similar type list:
-
similar type search:search similar
search a part:search