LAE4001R transistor datasheet
 
 
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LAE4001R


SI NPN transistor

Uce/Ucb: 25/30V
Ic: 80mA
β (Ic/Ib): 20-220
N: 480mW
F: 4GHz
Tmax: 200°C
the LAE4001R is a silicon NPN microwave power transistor preferred for use in common emitter class A linear power amplifiers up to 4GHz
Picture: -
Source: PSC Philips Data Handbook...... [more]
PSC Philips Data Handbook SC15
Advanced Information for LAE4001R
OEM:Philips Semi... [more]
Philips Semiconductors
Package: SOT100
datasheet (jpg):-
datasheet (pdf):-
complementary type:
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LAE4001R


SI NPN transistor

Uce/Ucb: 25/30V
Ic: 80mA
β (Ic/Ib): 20-220
N: 480mW
F: 4GHz
Tmax: 200°C
the LAE4001R is a silicon NPN microwave power transistor preferred for use in common emitter class A linear power amplifiers up to 4GHz
Picture: -
Source: PSC Philips Data Handbook...... [more]
PSC Philips Data Handbook SC15
Advanced Information for LAE4001R
OEM:Philips Semi... [more]
Philips Semiconductors
Package: SOT100
datasheet (jpg):-
datasheet (pdf):-
complementary type:
-
similar type list:
-
similar type search:search similar
search a part:search

LAE4001R


SI NPN transistor

Uce/Ucb: 25/30V
Ic: 80mA
β (Ic/Ib): 20-220
N: 480mW
F: 4GHz
Tmax: 200°C
the LAE4001R is a silicon NPN microwave power transistor preferred for use in common emitter class A linear power amplifiers up to 4GHz
Picture: -
Source: PSC Philips Data Handbook...... [more]
PSC Philips Data Handbook SC15
Advanced Information for LAE4001R
OEM:Philips Semi... [more]
Philips Semiconductors
Package: SOT100
datasheet (jpg):-
datasheet (pdf):-
complementary type:
-
similar type list:
-
similar type search:search similar
search a part:search