| GT8Q101
SI N-IGBT transistor | | | UCE | 1200V | | | UGE | ±20V | | IC DC/AC | 8/16A | | Ptot | 100W | | TON/TOFF | 400/800nS | | TJ | 150°C | | Picture: | - | | Source: | Toshiba IGBT Databook 199...... [more] Toshiba IGBT Databook 1995/96 | | | Advanced Information for GT8Q101 | | OEM: | Toshiba Toky... [more] Toshiba Tokyo Shibaura Electric Co. Ltd. Japan | | Package: | 2-16C1C | | GT8Q101 datasheet (jpg): | available | | GT8Q101 datasheet (pdf): | available | | OEM datasheet: | - | complementary type:
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