GT80J101 SI N-IGBT transistor | | UCE | 600V | | UGE | ±20V | IC DC/AC | 80/160A | Ptot | 200W | TON/TOFF | 500/700nS | TJ | 150°C | Picture: | - | Source: | Toshiba IGBT Databook 199...... [more] Toshiba IGBT Databook 1995/96 | | Advanced Information for GT80J101 | OEM: | Toshiba Toky... [more] Toshiba Tokyo Shibaura Electric Co. Ltd. Japan | Package: | 2-21F1C | GT80J101 datasheet (jpg): | available | GT80J101 datasheet (pdf): | available | complementary type:
| - | similar type list:
| - | similar type search: | - | | search a part: | search |
|