| GT60M301
SI N-IGBT transistor | | | UCE | 900V | | | UGE | ±25V | | IC DC/AC | 60/120A | | Ptot | 200W | | TON/TOFF | 350/500nS | | TJ | 150°C | | Picture: | - | | Source: | Toshiba IGBT Databook 199...... [more] Toshiba IGBT Databook 1995/96 | | | Advanced Information for GT60M301 | | OEM: | Toshiba Toky... [more] Toshiba Tokyo Shibaura Electric Co. Ltd. Japan | | Package: | 2-21F2C | | GT60M301 datasheet (jpg): | available | | GT60M301 datasheet (pdf): | available | | OEM datasheet: | - | complementary type:
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