|
GT8J101
SI N-IGBT transistor
|
|
|
Uce:
|
600V
|
|
|
Uge:
|
20V
|
|
Ic: DC/AC
|
8/16A
|
|
N:
|
30W
|
|
Ton/Toff:
|
400/500nS
|
|
Tmax:
|
150°C
|
|
Source:
|
Toshiba IGBT Databook 199...... [more]
Toshiba IGBT Databook 1995/96
|
|
Picture:
|
- |
| | advanced information for GT8J101 | | OEM: | Toshiba Toky... [more]
Toshiba Tokyo Shibaura Electric Co. Ltd. Japan | | Package: |
2-10R1C | | GT8J101 datasheet (jpg): | available | | GT8J101 datasheet (pdf): | available | complementary type:
| - | similar type list:
| -
| | similar type search: | - |
|
GT8J101
SI N-IGBT transistor
|
|
|
Uce:
|
600V
|
|
|
Uge:
|
20V
|
|
Ic: DC/AC
|
8/16A
|
|
N:
|
30W
|
|
Ton/Toff:
|
400/500nS
|
|
Tmax:
|
150°C
|
|
Source:
|
Toshiba IGBT Databook 199...... [more]
Toshiba IGBT Databook 1995/96
|
|
Picture:
|
- |
| | to the shop | | advanced information for GT8J101 | | OEM: | Toshiba Toky... [more]
Toshiba Tokyo Shibaura Electric Co. Ltd. Japan | | Package: |
2-10R1C | | GT8J101 datasheet (jpg): | available | | GT8J101 datasheet (pdf): | available | complementary type:
| - | similar type list:
| -
| | similar type search: | - |
|
|
GT8J101
SI N-IGBT transistor
|
|
|
Uce:
|
600V
|
|
|
Uge:
|
20V
|
|
Ic: DC/AC
|
8/16A
|
|
N:
|
30W
|
|
Ton/Toff:
|
400/500nS
|
|
Tmax:
|
150°C
|
|
Source:
|
Toshiba IGBT Databook 199...... [more]
Toshiba IGBT Databook 1995/96
|
|
Picture:
|
- |
| | advanced information for GT8J101 | | OEM: | Toshiba Toky... [more]
Toshiba Tokyo Shibaura Electric Co. Ltd. Japan | | Package: |
2-10R1C | | GT8J101 datasheet (jpg): | available | | GT8J101 datasheet (pdf): | available | complementary type:
| - | similar type list:
| -
| | similar type search: | - |
|
|
