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GT60M102


SI N-IGBT transistor
GFX
UCE 900V
UGE 25V
IC 60A
Ptot 200W
TON/TOFF 350/800nS
TJ -
the GT60M102 is a silicon IGBT transistor preferred for use in power applications
Picture: -
Source: Jaeger electronic catalog...... [more]
Jaeger electronic catalog 1999
Advanced Information for GT60M102
OEM:Toshiba Toky... [more]
Toshiba Tokyo Shibaura Electric Co. Ltd. Japan
Package:TOP-3L
GT60M102 datasheet (jpg):-
GT60M102 datasheet (pdf):-
OEM datasheet:-
complementary type:
-
similar type list:GN9060E
similar type search:-
search a part:search

GT60M102


SI N-IGBT transistor
GFX
UCE 900V
UGE 25V
IC 60A
Ptot 200W
TON/TOFF 350/800nS
TJ -
the GT60M102 is a silicon IGBT transistor preferred for use in power applications
Picture: -
Source: Jaeger electronic catalog...... [more]
Jaeger electronic catalog 1999
Advanced Information for GT60M102
OEM:Toshiba Toky... [more]
Toshiba Tokyo Shibaura Electric Co. Ltd. Japan
Package:TOP-3L
GT60M102 datasheet (jpg):-
GT60M102 datasheet (pdf):-
OEM datasheet:-
complementary type:
-
similar type list:GN9060E
similar type search:-
search a part:search

GT60M102


SI N-IGBT transistor
GFX
UCE 900V
UGE 25V
IC 60A
Ptot 200W
TON/TOFF 350/800nS
TJ -
the GT60M102 is a silicon IGBT transistor preferred for use in power applications
Picture: -
Source: Jaeger electronic catalog...... [more]
Jaeger electronic catalog 1999
Advanced Information for GT60M102
OEM:Toshiba Toky... [more]
Toshiba Tokyo Shibaura Electric Co. Ltd. Japan
Package:TOP-3L
GT60M102 datasheet (jpg):-
GT60M102 datasheet (pdf):-
OEM datasheet:-
complementary type:
-
similar type list:GN9060E
similar type search:-
search a part:search