GT60M102 transistor datasheet
 
 


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GT60M102


SI N-IGBT transistor

Uce: 900V
Uge: 25V
Ic: 60A
N: 200W
Ton/Toff: 350/800nS
Tmax: -
the GT60M102 is a silicon IGBT transistor preferred for use in power applications
Source: Jaeger electronic catalog...... [more]
Jaeger electronic catalog 1999
Picture: -
advanced information for GT60M102
OEM:Toshiba Toky... [more]
Toshiba Tokyo Shibaura Electric Co. Ltd. Japan
Package:TOP-3L
datasheet (jpg):-
datasheet (pdf):-
complementary type:
-
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