GT50J301 transistor datasheet
 
 


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GT50J301


SI N-IGBT transistor

Uce: 600V
Uge: ±20V
Ic: DC/AC 50/100A
N: 200W
Ton/Toff: 400/500nS
Tmax: 150°C
the GT50J301 is a silicon IGBT-N transistor, Uce = 600V, Ic = 50A, applications: power switch, integrated diode
Source: Toshiba IGBT Databook 199...... [more]
Toshiba IGBT Databook 1995/96
Picture: -
advanced information for GT50J301
OEM:Toshiba Toky... [more]
Toshiba Tokyo Shibaura Electric Co. Ltd. Japan
Package:2-21F2C
GT50J301 datasheet (jpg):available
GT50J301 datasheet (pdf):available
complementary type:
-
similar type list:MGY30N60D
similar type search:-

GT50J301


SI N-IGBT transistor

Uce: 600V
Uge: ±20V
Ic: DC/AC 50/100A
N: 200W
Ton/Toff: 400/500nS
Tmax: 150°C
the GT50J301 is a silicon IGBT-N transistor, Uce = 600V, Ic = 50A, applications: power switch, integrated diode
Source: Toshiba IGBT Databook 199...... [more]
Toshiba IGBT Databook 1995/96
Picture: -
to the shop
advanced information for GT50J301
OEM:Toshiba Toky... [more]
Toshiba Tokyo Shibaura Electric Co. Ltd. Japan
Package:2-21F2C
GT50J301 datasheet (jpg):available
GT50J301 datasheet (pdf):available
complementary type:
-
similar type list:MGY30N60D
similar type search:-

GT50J301


SI N-IGBT transistor

Uce: 600V
Uge: ±20V
Ic: DC/AC 50/100A
N: 200W
Ton/Toff: 400/500nS
Tmax: 150°C
the GT50J301 is a silicon IGBT-N transistor, Uce = 600V, Ic = 50A, applications: power switch, integrated diode
Source: Toshiba IGBT Databook 199...... [more]
Toshiba IGBT Databook 1995/96
Picture: -
advanced information for GT50J301
OEM:Toshiba Toky... [more]
Toshiba Tokyo Shibaura Electric Co. Ltd. Japan
Package:2-21F2C
GT50J301 datasheet (jpg):available
GT50J301 datasheet (pdf):available
complementary type:
-
similar type list:MGY30N60D
similar type search:-
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