GT50J102 SI N-IGBT transistor | | Uce: | 600V | | Uge: | ±20V | Ic: DC/AC | 50/100A | N: | 200W | Ton/Toff: | 400/500nS | Tmax: | 150°C | Picture: | - | Source: | Toshiba IGBT Databook 199...... [more] Toshiba IGBT Databook 1995/96 | | Advanced Information for GT50J102 | OEM: | Toshiba Toky... [more] Toshiba Tokyo Shibaura Electric Co. Ltd. Japan | Package: | 2-21F2C | GT50J102 datasheet (jpg): | available | GT50J102 datasheet (pdf): | available | complementary type:
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