| GT10J303
SI N-IGBT transistor | | | UCE | 600V | | | UGE | ±20V | | IC DC/AC | 10/20A | | Ptot | 30W | | TON/TOFF | 400/500nS | | TJ | 150°C | | Picture: | - | | Source: | datasheet | | | Advanced Information for GT10J303 | | OEM: | Toshiba Toky... [more] Toshiba Tokyo Shibaura Electric Co. Ltd. Japan | | Package: | 2-10R1C | | GT10J303 datasheet (jpg): | - | | GT10J303 datasheet (pdf): | - | | OEM datasheet: | - | complementary type:
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