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GN12050E


GN12050E


SI N-IGBT transistor

TOP-3L
Uce: 1200V
Uge: 20V
Ic: 50A
N: 200W
F: -
Tmax: -
the GN12050E is a silicon IGBT transistor preferred for use in power applications
Source:Jaeger electronic catalog 1999
Picture:-
Advanced Information for: GN12050E
OEM:Hitachi Ltd. Japan
Package:TOP-3L
datasheet (jpg):-
datasheet (pdf):-
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