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GN12030E

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GT40T101

MGY25N120

GN12030E


SI N-IGBT transistor

TOP-3L
Uce: 1200V
Uge: 20V
Ic: 30A
N: 200W
F: -
Tmax: -
the GN12030E is a silicon IGBT transistor preferred for use in power applications
Source:Jaeger electronic catalog 1999
Picture:-
Advanced Information for: GN12030E
OEM:Hitachi Ltd. Japan
Package:TOP-3L
datasheet (jpg):-
datasheet (pdf):-
complementary type:
-
similar type list:GT40T101, MGY25N120
similar type search:-
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