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GN12015C

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GT15Q101

GN12015C


SI N-IGBT transistor

TO-3P
Uce: 1200V
Uge: 20V
Ic: 15A
N: 150W
F: -
Tmax: -
the GN12015C is a silicon IGBT transistor preferred for use in power applications
Source:Jaeger electronic catalog 1999
Picture:-
Advanced Information for: GN12015C
OEM:Hitachi Ltd. Japan
Package: TO-3P
datasheet (jpg):-
datasheet (pdf):-
complementary type:
-
similar type list:GT15Q101
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