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BYW28-600


si diode
GFX
UR 600V
IF 4A
- -
trr 50nS
UF / IF <0.9V/3.5A
TJ 175°C
the BYW28-600 is an ultrafast silicon diode, U=600V, I=4A, applications: controlled avalanche rectifier
Picture: -
Source: Philips Power Diodes 1999
Advanced Information for BYW28-600
OEM:Philips Semi... [more]
Philips Semiconductors
Package: SOD115
BYW28-600 datasheet (jpg):available
BYW28-600 datasheet (pdf):available
OEM datasheet:-
complementary type:
-
similar type list:
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similar type search:search similar
search a part:search

BYW28-600


si diode
GFX
UR 600V
IF 4A
- -
trr 50nS
UF / IF <0.9V/3.5A
TJ 175°C
the BYW28-600 is an ultrafast silicon diode, U=600V, I=4A, applications: controlled avalanche rectifier
Picture: -
Source: Philips Power Diodes 1999
Advanced Information for BYW28-600
OEM:Philips Semi... [more]
Philips Semiconductors
Package: SOD115
BYW28-600 datasheet (jpg):available
BYW28-600 datasheet (pdf):available
OEM datasheet:-
complementary type:
-
similar type list:
-
similar type search:search similar
search a part:search

BYW28-600


si diode
GFX
UR 600V
IF 4A
- -
trr 50nS
UF / IF <0.9V/3.5A
TJ 175°C
the BYW28-600 is an ultrafast silicon diode, U=600V, I=4A, applications: controlled avalanche rectifier
Picture: -
Source: Philips Power Diodes 1999
Advanced Information for BYW28-600
OEM:Philips Semi... [more]
Philips Semiconductors
Package: SOD115
BYW28-600 datasheet (jpg):available
BYW28-600 datasheet (pdf):available
OEM datasheet:-
complementary type:
-
similar type list:
-
similar type search:search similar
search a part:search