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MJE13009


SI NPN transistor
GFX
UCE 700V
IC 12A
hFE 6-40
Ptot 100W
fT >4MHz
TJ 150°C
the MJE13009 is a silicon NPN power transistor preferred for use in high voltage, high speed power switching applications in inductive circuits where fall time is critical
Picture: -
Source: datasheet
Advanced Information for MJE13009
OEM:Motorola Sem... [more]
Motorola Semiconductor Products Inc.
Package: TO-220AB
MJE13009 datasheet (jpg):-
MJE13009 datasheet (pdf):-
OEM datasheet:-
complementary type:
-
similar type list:
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similar type search:search similar
search a part:search

MJE13009


SI NPN transistor
GFX
UCE 700V
IC 12A
hFE 6-40
Ptot 100W
fT >4MHz
TJ 150°C
the MJE13009 is a silicon NPN power transistor preferred for use in high voltage, high speed power switching applications in inductive circuits where fall time is critical
Picture: -
Source: datasheet
Advanced Information for MJE13009
OEM:Motorola Sem... [more]
Motorola Semiconductor Products Inc.
Package: TO-220AB
MJE13009 datasheet (jpg):-
MJE13009 datasheet (pdf):-
OEM datasheet:-
complementary type:
-
similar type list:
-
similar type search:search similar
search a part:search

MJE13009


SI NPN transistor
GFX
UCE 700V
IC 12A
hFE 6-40
Ptot 100W
fT >4MHz
TJ 150°C
the MJE13009 is a silicon NPN power transistor preferred for use in high voltage, high speed power switching applications in inductive circuits where fall time is critical
Picture: -
Source: datasheet
Advanced Information for MJE13009
OEM:Motorola Sem... [more]
Motorola Semiconductor Products Inc.
Package: TO-220AB
MJE13009 datasheet (jpg):-
MJE13009 datasheet (pdf):-
OEM datasheet:-
complementary type:
-
similar type list:
-
similar type search:search similar
search a part:search