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FE3819


SI N-FET transistor
GFX
UDS ±25V
IDS 2-20mA
UGS 25V
RDS(ON) -
Ptot 300mW
fT -
the FE3819 is a silicon N-channel field effect transistor preferred for use in low signal applications
Picture: -
Source: Jaeger electronic catalog 1999
Advanced Information for FE3819
OEM:Teledyne Sem... [more]
Teledyne Semiconductor, USA
Package: TO-106
FE3819 datasheet (jpg):-
FE3819 datasheet (pdf):-
OEM datasheet:-
complementary type:
-
similar type list:2N3919
similar type search:-
search a part:search

FE3819


SI N-FET transistor
GFX
UDS ±25V
IDS 2-20mA
UGS 25V
RDS(ON) -
Ptot 300mW
fT -
the FE3819 is a silicon N-channel field effect transistor preferred for use in low signal applications
Picture: -
Source: Jaeger electronic catalog 1999
Advanced Information for FE3819
OEM:Teledyne Sem... [more]
Teledyne Semiconductor, USA
Package: TO-106
FE3819 datasheet (jpg):-
FE3819 datasheet (pdf):-
OEM datasheet:-
complementary type:
-
similar type list:2N3919
similar type search:-
search a part:search

FE3819


SI N-FET transistor
GFX
UDS ±25V
IDS 2-20mA
UGS 25V
RDS(ON) -
Ptot 300mW
fT -
the FE3819 is a silicon N-channel field effect transistor preferred for use in low signal applications
Picture: -
Source: Jaeger electronic catalog 1999
Advanced Information for FE3819
OEM:Teledyne Sem... [more]
Teledyne Semiconductor, USA
Package: TO-106
FE3819 datasheet (jpg):-
FE3819 datasheet (pdf):-
OEM datasheet:-
complementary type:
-
similar type list:2N3919
similar type search:-
search a part:search