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2N3330


SI P-FET transistor
GFX
UDS -
IDS -
UGS 6V
RDS(ON) 0.8Ω
Ptot 300mW
fT -
the 2N3330 is a silicon P-channel field effect transistor preferred for use in low noise low signal applications
Picture: -
Source: Texas Instruments Halbleiter D...... [more]
Texas Instruments Halbleiter Datenbuch 68/69
Advanced Information for 2N3330
OEM:Texas Instru... [more]
Texas Instruments
Package: TO-18
2N3330 datasheet (jpg):available
2N3330 datasheet (pdf):available
OEM datasheet:-
complementary type:
-
similar type list:
-
similar type search:-
search a part:search

2N3330


SI P-FET transistor
GFX
UDS -
IDS -
UGS 6V
RDS(ON) 0.8Ω
Ptot 300mW
fT -
the 2N3330 is a silicon P-channel field effect transistor preferred for use in low noise low signal applications
Picture: -
Source: Texas Instruments Halbleiter D...... [more]
Texas Instruments Halbleiter Datenbuch 68/69
Advanced Information for 2N3330
OEM:Texas Instru... [more]
Texas Instruments
Package: TO-18
2N3330 datasheet (jpg):available
2N3330 datasheet (pdf):available
OEM datasheet:-
complementary type:
-
similar type list:
-
similar type search:-
search a part:search

2N3330


SI P-FET transistor
GFX
UDS -
IDS -
UGS 6V
RDS(ON) 0.8Ω
Ptot 300mW
fT -
the 2N3330 is a silicon P-channel field effect transistor preferred for use in low noise low signal applications
Picture: -
Source: Texas Instruments Halbleiter D...... [more]
Texas Instruments Halbleiter Datenbuch 68/69
Advanced Information for 2N3330
OEM:Texas Instru... [more]
Texas Instruments
Package: TO-18
2N3330 datasheet (jpg):available
2N3330 datasheet (pdf):available
OEM datasheet:-
complementary type:
-
similar type list:
-
similar type search:-
search a part:search