2N3330 transistor datasheet

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2N3330


SI P-FET transistor


TO-18
Uds: -
Ids: -
Ugss: -
RDS-on: 800mΩ
N: 300mW
F: -
the 2N3330 is a silicon P-channel field effect transistor preferred for use in low noise low signal applications
Source: Texas Instruments Halbleiter D... [more]
Texas Instruments Halbleiter Datenbuch 68/69
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OEM:Texas Instruments
Package: TO-18
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