2N3329 transistor datasheet

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2N3329


SI P-FET transistor


TO-18
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RDS-on:
N: 300mW
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the 2N3329 is a silicon P-channel field effect transistor preferred for use in low noise low signal applications
Source: Texas Instruments Halbleiter D... [more]
Texas Instruments Halbleiter Datenbuch 68/69
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advanced information for 2N3329
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OEM:Texas Instruments
Package: TO-18
2N3329 datasheet (jpg):available
2N3329 datasheet (pdf):available
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