2N2386 transistor datasheet

Page:
 

2N2386


SI P-FET transistor

TO-5
Uds: -
Ids: -
Ugss: -
RDS-on: -
N: 500mW
F: -
the 2N2386 is a silicon P-channel field effect transistor preferred for use in industrial low signal applications
Source: Texas Instruments Halbleiter D... [more]
Texas Instruments Halbleiter Datenbuch 68/69
Picture: -
advanced information for 2N2386
( toggle )
OEM:Texas Instruments
Package: TO-5
2N2386 datasheet (jpg):available
2N2386 datasheet (pdf):available
complementary type:
-
similar type list:
-
similar type search:-
file https://www.web-bcs.com/transistor/tfet/2n/2N2386.php ; created: Tue, 07 Dec 2021 05:54:09 +0000UTC from 91.63.223.131