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RX1214B350Y


SI NPN transistor
GFX
UCE/UCB 65/65V
IC 25A
hFE -
Ptot 750W
fT 1.4GHz
TJ 200°C
the RX1214B350Y is a silicon NPN microwave power transistor preferred for use as common base class C wideband amplifier operating under pulsed conditions, recommended for L - band radar applicati... [more]
the RX1214B350Y is a silicon NPN microwave power transistor preferred for use as common base class C wideband amplifier operating under pulsed conditions, recommended for L - band radar applications in the 1.2GHz to 1.4GHz band
Picture: -
Source: PSC Philips Data Handbook...... [more]
PSC Philips Data Handbook SC15
advanced information for RX1214B350Y
OEM:Philips Semi... [more]
Philips Semiconductors
Package:SOT439A
datasheet (jpg):-
datasheet (pdf):-
OEM datasheet:-
complementary type:
-
similar type list:
-
similar type search:search similar
search a part:search

RX1214B350Y


SI NPN transistor
GFX
UCE/UCB 65/65V
IC 25A
hFE -
Ptot 750W
fT 1.4GHz
TJ 200°C
the RX1214B350Y is a silicon NPN microwave power transistor preferred for use as common base class C wideband amplifier operating under pulsed conditions, recommended for L - band radar applicati... [more]
the RX1214B350Y is a silicon NPN microwave power transistor preferred for use as common base class C wideband amplifier operating under pulsed conditions, recommended for L - band radar applications in the 1.2GHz to 1.4GHz band
Picture: -
Source: PSC Philips Data Handbook...... [more]
PSC Philips Data Handbook SC15
advanced information for RX1214B350Y
OEM:Philips Semi... [more]
Philips Semiconductors
Package:SOT439A
datasheet (jpg):-
datasheet (pdf):-
OEM datasheet:-
complementary type:
-
similar type list:
-
similar type search:search similar
search a part:search

RX1214B350Y


SI NPN transistor
GFX
UCE/UCB 65/65V
IC 25A
hFE -
Ptot 750W
fT 1.4GHz
TJ 200°C
the RX1214B350Y is a silicon NPN microwave power transistor preferred for use as common base class C wideband amplifier operating under pulsed conditions, recommended for L - band radar applicati... [more]
the RX1214B350Y is a silicon NPN microwave power transistor preferred for use as common base class C wideband amplifier operating under pulsed conditions, recommended for L - band radar applications in the 1.2GHz to 1.4GHz band
Picture: -
Source: PSC Philips Data Handbook...... [more]
PSC Philips Data Handbook SC15
advanced information for RX1214B350Y
OEM:Philips Semi... [more]
Philips Semiconductors
Package:SOT439A
datasheet (jpg):-
datasheet (pdf):-
OEM datasheet:-
complementary type:
-
similar type list:
-
similar type search:search similar
search a part:search
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