Lookbooks
R
X
G
Page:

R1006


SI NPN transistor
GFX
UCE/UCB 50/50V
IC 0.1A
hFE >68
Ptot 300mW
fT 250MHz
TJ 150°C
the R1006 is a silicon NPN transistor preferred for use in switching applications, bias resistor build in
Picture: -
Source: KSR1006
Advanced Information for R1006
OEM:Samsung Elec... [more]
Samsung Electronics CO. LTD.
Package: TO-92
R1006 datasheet (jpg):-
R1006 datasheet (pdf):-
OEM datasheet:-
complementary type:
-
similar type list:
-
similar type search:-
search a part:search

R1006


SI NPN transistor
GFX
UCE/UCB 50/50V
IC 0.1A
hFE >68
Ptot 300mW
fT 250MHz
TJ 150°C
the R1006 is a silicon NPN transistor preferred for use in switching applications, bias resistor build in
Picture: -
Source: KSR1006
Advanced Information for R1006
OEM:Samsung Elec... [more]
Samsung Electronics CO. LTD.
Package: TO-92
R1006 datasheet (jpg):-
R1006 datasheet (pdf):-
OEM datasheet:-
complementary type:
-
similar type list:
-
similar type search:-
search a part:search

R1006


SI NPN transistor
GFX
UCE/UCB 50/50V
IC 0.1A
hFE >68
Ptot 300mW
fT 250MHz
TJ 150°C
the R1006 is a silicon NPN transistor preferred for use in switching applications, bias resistor build in
Picture: -
Source: KSR1006
Advanced Information for R1006
OEM:Samsung Elec... [more]
Samsung Electronics CO. LTD.
Package: TO-92
R1006 datasheet (jpg):-
R1006 datasheet (pdf):-
OEM datasheet:-
complementary type:
-
similar type list:
-
similar type search:-
search a part:search