R1001 transistor datasheet
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R1001
SI NPN transistor
Uce/Ucb:
50/50V
Ic:
0.1A
β (Ic/Ib):
>20
N:
300mW
F:
>250MHz
Tmax:
150°C
the R1001 is a silicon NPN transistor preferred for use in switching applications, bias resistor build in
Source:
KSR1001
Picture:
-
advanced information for R1001
OEM:
Samsung Electronics CO. LTD.
Package:
TO-92
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