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R1001


SI NPN transistor
GFX
UCE/UCB 50/50V
IC 0.1A
hFE >20
Ptot 300mW
fT >250MHz
TJ 150°C
the R1001 is a silicon NPN transistor preferred for use in switching applications, bias resistor build in
Picture: -
Source: KSR1001
Advanced Information for R1001
OEM:Samsung Elec... [more]
Samsung Electronics CO. LTD.
Package: TO-92
R1001 datasheet (jpg):-
R1001 datasheet (pdf):-
OEM datasheet:-
complementary type:
-
similar type list:
-
similar type search:-
search a part:search

R1001


SI NPN transistor
GFX
UCE/UCB 50/50V
IC 0.1A
hFE >20
Ptot 300mW
fT >250MHz
TJ 150°C
the R1001 is a silicon NPN transistor preferred for use in switching applications, bias resistor build in
Picture: -
Source: KSR1001
Advanced Information for R1001
OEM:Samsung Elec... [more]
Samsung Electronics CO. LTD.
Package: TO-92
R1001 datasheet (jpg):-
R1001 datasheet (pdf):-
OEM datasheet:-
complementary type:
-
similar type list:
-
similar type search:-
search a part:search

R1001


SI NPN transistor
GFX
UCE/UCB 50/50V
IC 0.1A
hFE >20
Ptot 300mW
fT >250MHz
TJ 150°C
the R1001 is a silicon NPN transistor preferred for use in switching applications, bias resistor build in
Picture: -
Source: KSR1001
Advanced Information for R1001
OEM:Samsung Elec... [more]
Samsung Electronics CO. LTD.
Package: TO-92
R1001 datasheet (jpg):-
R1001 datasheet (pdf):-
OEM datasheet:-
complementary type:
-
similar type list:
-
similar type search:-
search a part:search