R1001 transistor datasheet

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original type:


SI NPN transistor

Uce/Ucb: 50/50V
Ic: 0.1A
β (Ic/Ib): >20
N: 300mW
F: >250MHz
Tmax: 150°C
the R1001 is a silicon NPN transistor preferred for use in switching applications, bias resistor build in
Source: KSR1001
Picture: -
Advanced Information for: R1001
OEM:Samsung Electronics CO. LTD.
Package : TO-92
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datasheet (pdf):-
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file https://www.web-bcs.com/transistor/tc/r0/R1001.php ; created: Wed, 28 Jul 2021 03:20:52 +0000UTC from