PTB20176 transistor datasheet
 
 
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PTB20176


SI NPN transistor

Uce/Ucb: 20/45V
Ic: 1A
β (Ic/Ib): 20-100
N: 21W
F: -
Tmax: -
the PTB20176 is a silicon NPN common emitter RF power transistor intended for 26Vdc operation from 1.78 to 1.92GHz
marking code: 20176
Picture: -
Source: Ericsson RF power transis...... [more]
Ericsson RF power transistors 1999 Data Book
Advanced Information for PTB20176
OEM:Ericsson Com... [more]
Ericsson Components AB
Package: 1
datasheet (jpg):-
datasheet (pdf):-
complementary type:
-
similar type list:
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similar type search:search similar
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PTB20176


SI NPN transistor

Uce/Ucb: 20/45V
Ic: 1A
β (Ic/Ib): 20-100
N: 21W
F: -
Tmax: -
the PTB20176 is a silicon NPN common emitter RF power transistor intended for 26Vdc operation from 1.78 to 1.92GHz
marking code: 20176
Picture: -
Source: Ericsson RF power transis...... [more]
Ericsson RF power transistors 1999 Data Book
Advanced Information for PTB20176
OEM:Ericsson Com... [more]
Ericsson Components AB
Package: 1
datasheet (jpg):-
datasheet (pdf):-
complementary type:
-
similar type list:
-
similar type search:search similar
search a part:search

PTB20176


SI NPN transistor

Uce/Ucb: 20/45V
Ic: 1A
β (Ic/Ib): 20-100
N: 21W
F: -
Tmax: -
the PTB20176 is a silicon NPN common emitter RF power transistor intended for 26Vdc operation from 1.78 to 1.92GHz
marking code: 20176
Picture: -
Source: Ericsson RF power transis...... [more]
Ericsson RF power transistors 1999 Data Book
Advanced Information for PTB20176
OEM:Ericsson Com... [more]
Ericsson Components AB
Package: 1
datasheet (jpg):-
datasheet (pdf):-
complementary type:
-
similar type list:
-
similar type search:search similar
search a part:search