Lookbooks
R
X
G
Page:

P12


SI NPN darlington transistor
GFX
UCE/UCB 10/20V
IC -
hFE >20000
Ptot 625mW
fT -
TJ 150°C
the P12 is a silicon NPN darlington transistor preferred for use in general purpose applications
Picture: -
Source: KSP12
Advanced Information for P12
OEM:Samsung Elec... [more]
Samsung Electronics CO. LTD.
Package: TO-92
P12 datasheet (jpg):-
P12 datasheet (pdf):-
OEM datasheet:-
complementary type:
-
similar type list:
-
similar type search:search similar
search a part:search

P12


SI NPN darlington transistor
GFX
UCE/UCB 10/20V
IC -
hFE >20000
Ptot 625mW
fT -
TJ 150°C
the P12 is a silicon NPN darlington transistor preferred for use in general purpose applications
Picture: -
Source: KSP12
Advanced Information for P12
OEM:Samsung Elec... [more]
Samsung Electronics CO. LTD.
Package: TO-92
P12 datasheet (jpg):-
P12 datasheet (pdf):-
OEM datasheet:-
complementary type:
-
similar type list:
-
similar type search:search similar
search a part:search

P12


SI NPN darlington transistor
GFX
UCE/UCB 10/20V
IC -
hFE >20000
Ptot 625mW
fT -
TJ 150°C
the P12 is a silicon NPN darlington transistor preferred for use in general purpose applications
Picture: -
Source: KSP12
Advanced Information for P12
OEM:Samsung Elec... [more]
Samsung Electronics CO. LTD.
Package: TO-92
P12 datasheet (jpg):-
P12 datasheet (pdf):-
OEM datasheet:-
complementary type:
-
similar type list:
-
similar type search:search similar
search a part:search