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OC812


GE PNP transistor
UCE -20V
IC -15mA
hFE -
Ptot 25mW
fT -
TJ 65°C
the OC812 is a germanium low noise AF - transistor preferred for use in pre - amplifier applications
Picture: -
Source: RFT Halbleiter Bauelement...... [more]
RFT Halbleiter Bauelemente 1963
Advanced Information for OC812
OEM:RFT electron... [more]
RFT electronic, VEB Bauelemente
Package:BF1T
OC812 datasheet (jpg):-
OC812 datasheet (pdf):-
OEM datasheet:-
complementary type:
-
similar type list:
-
similar type search:search similar
search a part:search

OC812


GE PNP transistor
UCE -20V
IC -15mA
hFE -
Ptot 25mW
fT -
TJ 65°C
the OC812 is a germanium low noise AF - transistor preferred for use in pre - amplifier applications
Picture: -
Source: RFT Halbleiter Bauelement...... [more]
RFT Halbleiter Bauelemente 1963
Advanced Information for OC812
OEM:RFT electron... [more]
RFT electronic, VEB Bauelemente
Package:BF1T
OC812 datasheet (jpg):-
OC812 datasheet (pdf):-
OEM datasheet:-
complementary type:
-
similar type list:
-
similar type search:search similar
search a part:search

OC812


GE PNP transistor
UCE -20V
IC -15mA
hFE -
Ptot 25mW
fT -
TJ 65°C
the OC812 is a germanium low noise AF - transistor preferred for use in pre - amplifier applications
Picture: -
Source: RFT Halbleiter Bauelement...... [more]
RFT Halbleiter Bauelemente 1963
Advanced Information for OC812
OEM:RFT electron... [more]
RFT electronic, VEB Bauelemente
Package:BF1T
OC812 datasheet (jpg):-
OC812 datasheet (pdf):-
OEM datasheet:-
complementary type:
-
similar type list:
-
similar type search:search similar
search a part:search