Lookbooks
R
X
G
Page:

MJ11016


SI NPN darlington transistor
GFX
UCE/UCB 120/120V
IC 30A
hFE >200
Ptot 200W
fT >4MHz
TJ 200°C
the MJ11016 is a high current NPN silicon darlington transistor preferred for use as output device in general purpose amplifier applications
Picture: -
Source: datasheet
Advanced Information for MJ11016
OEM:Motorola Sem... [more]
Motorola Semiconductor Products Inc.
Package: TO-3
MJ11016 datasheet (jpg):-
MJ11016 datasheet (pdf):-
OEM datasheet:-
complementary type:
-
similar type list:
-
similar type search:search similar
search a part:search

MJ11016


SI NPN darlington transistor
GFX
UCE/UCB 120/120V
IC 30A
hFE >200
Ptot 200W
fT >4MHz
TJ 200°C
the MJ11016 is a high current NPN silicon darlington transistor preferred for use as output device in general purpose amplifier applications
Picture: -
Source: datasheet
Advanced Information for MJ11016
OEM:Motorola Sem... [more]
Motorola Semiconductor Products Inc.
Package: TO-3
MJ11016 datasheet (jpg):-
MJ11016 datasheet (pdf):-
OEM datasheet:-
complementary type:
-
similar type list:
-
similar type search:search similar
search a part:search

MJ11016


SI NPN darlington transistor
GFX
UCE/UCB 120/120V
IC 30A
hFE >200
Ptot 200W
fT >4MHz
TJ 200°C
the MJ11016 is a high current NPN silicon darlington transistor preferred for use as output device in general purpose amplifier applications
Picture: -
Source: datasheet
Advanced Information for MJ11016
OEM:Motorola Sem... [more]
Motorola Semiconductor Products Inc.
Package: TO-3
MJ11016 datasheet (jpg):-
MJ11016 datasheet (pdf):-
OEM datasheet:-
complementary type:
-
similar type list:
-
similar type search:search similar
search a part:search