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MJ11015


SI PNP darlington transistor
GFX
UCE/UCB -120/-120V
IC -30A
hFE >200
Ptot 200W
fT >4MHz
TJ 200°C
the MJ11015 is a high current PNP silicon darlington transistor preferred for use as output device in general purpose amplifier applications
Image: -
Source: datasheet
Informations plus avancées pour MJ11015
OEM:Motorola Sem... [plus]
Motorola Semiconductor Products Inc.
Package: TO-3
Fiche technique (jpg):-
Fiche technique (pdf):-
OEM Fiche technique:-
Type complémentaire:
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Liste des type similaires:
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MJ11015


SI PNP darlington transistor
GFX
UCE/UCB -120/-120V
IC -30A
hFE >200
Ptot 200W
fT >4MHz
TJ 200°C
the MJ11015 is a high current PNP silicon darlington transistor preferred for use as output device in general purpose amplifier applications
Image: -
Source: datasheet
Informations plus avancées pour MJ11015
OEM:Motorola Sem... [plus]
Motorola Semiconductor Products Inc.
Package: TO-3
Fiche technique (jpg):-
Fiche technique (pdf):-
OEM Fiche technique:-
Type complémentaire:
-
Liste des type similaires:
-
Recherche des type similaires:Recherche similaire
Composant rech.:recherche

MJ11015


SI PNP darlington transistor
GFX
UCE/UCB -120/-120V
IC -30A
hFE >200
Ptot 200W
fT >4MHz
TJ 200°C
the MJ11015 is a high current PNP silicon darlington transistor preferred for use as output device in general purpose amplifier applications
Image: -
Source: datasheet
Informations plus avancées pour MJ11015
OEM:Motorola Sem... [plus]
Motorola Semiconductor Products Inc.
Package: TO-3
Fiche technique (jpg):-
Fiche technique (pdf):-
OEM Fiche technique:-
Type complémentaire:
-
Liste des type similaires:
-
Recherche des type similaires:Recherche similaire
Composant rech.:recherche