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MJ11014


SI NPN darlington transistor
GFX
UCE/UCB 90/90V
IC 30A
hFE >200
Ptot 200W
fT >4MHz
TJ 200°C
the MJ11014 is a high current NPN silicon darlington transistor preferred for use as output device in general purpose amplifier applications
Image: -
Source: datasheet
Informations plus avancées pour MJ11014
OEM:Motorola Sem... [plus]
Motorola Semiconductor Products Inc.
Package: TO-3
Fiche technique (jpg):-
Fiche technique (pdf):-
OEM Fiche technique:-
Type complémentaire:
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Liste des type similaires:
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MJ11014


SI NPN darlington transistor
GFX
UCE/UCB 90/90V
IC 30A
hFE >200
Ptot 200W
fT >4MHz
TJ 200°C
the MJ11014 is a high current NPN silicon darlington transistor preferred for use as output device in general purpose amplifier applications
Image: -
Source: datasheet
Informations plus avancées pour MJ11014
OEM:Motorola Sem... [plus]
Motorola Semiconductor Products Inc.
Package: TO-3
Fiche technique (jpg):-
Fiche technique (pdf):-
OEM Fiche technique:-
Type complémentaire:
-
Liste des type similaires:
-
Recherche des type similaires:Recherche similaire
Composant rech.:recherche

MJ11014


SI NPN darlington transistor
GFX
UCE/UCB 90/90V
IC 30A
hFE >200
Ptot 200W
fT >4MHz
TJ 200°C
the MJ11014 is a high current NPN silicon darlington transistor preferred for use as output device in general purpose amplifier applications
Image: -
Source: datasheet
Informations plus avancées pour MJ11014
OEM:Motorola Sem... [plus]
Motorola Semiconductor Products Inc.
Package: TO-3
Fiche technique (jpg):-
Fiche technique (pdf):-
OEM Fiche technique:-
Type complémentaire:
-
Liste des type similaires:
-
Recherche des type similaires:Recherche similaire
Composant rech.:recherche