MJ10023 transistor datasheet

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MJ10023


SI NPN darlington transistor


TO-3
Uce: 600V
Ic: 40A
β (Ic/Ib): 50-600
N: 250W
F: -
Tmax: 200°C
the MJ10023 is a high power NPN silicon darlington transistor preferred for use in high voltage, high speed power switching applications in inductive circuits where fall time is critical
Source: datasheet
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OEM:Motorola Semiconductor Products Inc.
Package: TO-3
datasheet (jpg):-
OEM datasheet:available
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