MJ10021 transistor datasheet

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MJ10021


SI NPN darlington transistor


TO-3
Uce: 350V
Ic: 60A
β (Ic/Ib): 0.075-1k
N: 250W
F: -
Tmax: 200°C
the MJ10021 is a high power NPN silicon darlington transistor preferred for use in high voltage, high speed power switching applications in inductive circuits where fall time is critical
Source: datasheet
Picture: available
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OEM:Motorola Semiconductor Products Inc.
Package: TO-3
datasheet (jpg):-
OEM datasheet:available
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