LAE4001R transistor datasheet

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LAE4001R


SI NPN transistor

SOT100
Uce/Ucb: 25/30V
Ic: 80mA
β (Ic/Ib): 20-220
N: 480mW
F: 4GHz
Tmax: 200°C
the LAE4001R is a silicon NPN microwave power transistor preferred for use in common emitter class A linear power amplifiers up to 4GHz
Source: PSC Philips Data Handbook SC15
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advanced information for LAE4001R

OEM:Philips Semiconductors
Package: SOT100
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