LAE4001R transistor datasheet

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SI NPN transistor

Uce/Ucb: 25/30V
Ic: 80mA
β (Ic/Ib): 20-220
N: 480mW
F: 4GHz
Tmax: 200°C
the LAE4001R is a silicon NPN microwave power transistor preferred for use in common emitter class A linear power amplifiers up to 4GHz
Source: PSC Philips Data Handbook SC15
Picture: -
Advanced Information for: LAE4001R
OEM:Philips Semiconductors
Package : SOT100
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file ; created: Wed, 28 Jul 2021 03:24:08 +0000UTC from