LAE4001R transistor datasheet

Page:
 

LAE4001R


SI NPN transistor

SOT100
Uce/Ucb: 25/30V
Ic: 80mA
β (Ic/Ib): 20-220
N: 480mW
F: 4GHz
Tmax: 200°C
the LAE4001R is a silicon NPN microwave power transistor preferred for use in common emitter class A linear power amplifiers up to 4GHz
Source: PSC Philips Data Handbook SC15
Picture: -
advanced information for LAE4001R →shop
OEM:Philips Semiconductors
Package: SOT100
datasheet (jpg):-
datasheet (pdf):-
complementary type:
-
similar type list:
-
similar type search:search similar
file https://www.web-bcs.com/transistor/tc/la/LAE4001R.php ; created: Wed, 06 Oct 2021 20:47:16 +0000UTC from 91.63.218.58