transistor B676 Toshiba - complementary type


B676

at the shop:

2N.

B676

silicon PNP darlington transistor

Uce/Ucb:

-80/-100V

Ic:

-4A

β (Ic/Ib):

>2000

30W

Ton/Toff:

0.15/1.2µS

Tmax:

the B676 is a silicon PNP darlington transistor, Uce = 80V, Ic = 4A, applications: power transistor, integrated diode
Source:	2SB676
Picture:	-

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2SD686

silicon NPN darlington transistor

complementary type to B676

Uce/Ucb:

80/100V

Ic:

β (Ic/Ib):

>2000

30W

Ton/Toff:

0.2/2.1µS

Tmax:

the 2SD686 is a silicon NPN darlington transistor, Uce = 80V, Ic = 4A, applications: integrated diode, power transistor
Source:	Jaeger electronic catalog 1999
Picture:	-

complementary type: 2SD686

available:	unit price

2N369	1,25€		buy
2N398	1,25€		buy
2N483	1,25€		buy
2N524	1,25€		buy
2N708	1,25€		buy
2N711	1,25€		buy
2N1168X	3,20€		buy
2N1305	1,25€		buy

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