transistor B639 Hitachi Ltd. - complementary type


B639

at the shop:

2N.

B639

silicon PNP darlington transistor

Uce/Ucb:

-100/-100V

Ic:

-10A

β (Ic/Ib):

>1000

100W

Tmax:

the B639 is a silicon PNP darlington transistor, Uce = 100V, Ic = 10A, applications: integrated diode
Source:	2SB639
Picture:	-

wähle eine Menü-Sprache

2SD629

silicon NPN darlington transistor

complementary type to B639

Uce/Ucb:

100/100V

Ic:

10A

β (Ic/Ib):

1-20k

100W

Tmax:

the 2SD629 is a silicon NPN darlington transistor, Uce = 100V, Ic = 10A, applications: integrated diode
Source:	Jaeger electronic catalog 1999
Picture:	-

complementary type: 2SD629

available:	unit price

2N369	1,25€		buy
2N398	1,25€		buy
2N483	1,25€		buy
2N524	1,25€		buy
2N708	1,25€		buy
2N711	1,25€		buy
2N1168X	3,20€		buy
2N1305	1,25€		buy

[ICs]	[Diodes]	[SCR's]