MGW12N120D transistor datasheet
 
 
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MGW12N120D


SI N-IGBT transistor

Uce: 1200V
Uge: 20V
Ic: 20A
N: 123W
Ton/Toff: 157/307nS
Tmax: -
the MGW12N120D is a silicon IGBT transistor preferred for use in general purpose power applications-integrated diode
Picture: -
Source: Jaeger electronic catalog...... [more]
Jaeger electronic catalog 1999
Advanced Information for MGW12N120D
OEM:Motorola Sem... [more]
Motorola Semiconductor Products Inc.
Package: TO-247
datasheet (jpg):-
datasheet (pdf):-
complementary type:
-
similar type list:BUP313D
similar type search:-
search a part:search

MGW12N120D


SI N-IGBT transistor

Uce: 1200V
Uge: 20V
Ic: 20A
N: 123W
Ton/Toff: 157/307nS
Tmax: -
the MGW12N120D is a silicon IGBT transistor preferred for use in general purpose power applications-integrated diode
Picture: -
Source: Jaeger electronic catalog...... [more]
Jaeger electronic catalog 1999
Advanced Information for MGW12N120D
OEM:Motorola Sem... [more]
Motorola Semiconductor Products Inc.
Package: TO-247
datasheet (jpg):-
datasheet (pdf):-
complementary type:
-
similar type list:BUP313D
similar type search:-
search a part:search

MGW12N120D


SI N-IGBT transistor

Uce: 1200V
Uge: 20V
Ic: 20A
N: 123W
Ton/Toff: 157/307nS
Tmax: -
the MGW12N120D is a silicon IGBT transistor preferred for use in general purpose power applications-integrated diode
Picture: -
Source: Jaeger electronic catalog...... [more]
Jaeger electronic catalog 1999
Advanced Information for MGW12N120D
OEM:Motorola Sem... [more]
Motorola Semiconductor Products Inc.
Package: TO-247
datasheet (jpg):-
datasheet (pdf):-
complementary type:
-
similar type list:BUP313D
similar type search:-
search a part:search