MG8Q6ES42 transistor datasheet

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MG8Q6ES42


SI N-IGBT transistor

Tos/2-93A3A
Uce: 1200V
Uge: ±20V
Ic: DC/AC 8/16A
N: 80W
Ton/Toff: 400/800nS
Tmax: 150°C
the MG8Q6ES42 is a silicon 6x IGBT transistor, Uce = 1200V, Ic = 8A, applications: high power switching, motor control
Source: Toshiba IGBT Databook 1995/96
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advanced information for MG8Q6ES42

OEM:Toshiba Tokyo Shibaura Electric Co. Ltd. Japan
Package:2-93A3A
MG8Q6ES42 datasheet (jpg):available
MG8Q6ES42 datasheet (pdf):available
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