MG50Q6ES40 transistor datasheet
 
 


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MG50Q6ES40


SI N-IGBT transistor

Uce: 1200V
Uge: ±20V
Ic: DC/AC 50/100A
N: 250W
Ton/Toff: 400/800nS
Tmax: 150°C
the MG50Q6ES40 is a silicon 6x IGBT transistor, Uce = 1200V, Ic = 50A, applications: high power switching, motor control
Source: Toshiba IGBT Databook 199...... [more]
Toshiba IGBT Databook 1995/96
Picture: -
advanced information for MG50Q6ES40
OEM:Toshiba Toky... [more]
Toshiba Tokyo Shibaura Electric Co. Ltd. Japan
Package:2-94B1A
MG50Q6ES40 datasheet (jpg):available
MG50Q6ES40 datasheet (pdf):available
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