MG200Q1US41 transistor datasheet
 
 


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MG200Q1US41


SI N-IGBT transistor

Uce: 1200V
Uge: ±20V
Ic: DC/AC 200/400A
N: 1.4kW
Ton/Toff: 400/800nS
Tmax: 150°C
the MG200Q1US41 is a silicon IGBT transistor, Uce = 1200V, Ic = 200A, applications: high power switching, motor control
Source: Toshiba IGBT Databook 199...... [more]
Toshiba IGBT Databook 1995/96
Picture: -
advanced information for MG200Q1US41
OEM:Toshiba Toky... [more]
Toshiba Tokyo Shibaura Electric Co. Ltd. Japan
Package:2-109A4A
datasheet (jpg):available
datasheet (pdf):available
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