IGTM10N50A transistor datasheet
 
 


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IGTM10N50A


SI N-IGBT transistor

Uce: 500V
Uge: 20V
Ic: 10A
N: 75W
Ton/Toff: 0.1/1.4µS
Tmax: -
the IGTM10N50A is a silicon IGBT transistor preferred for use in power applications-energy loss = 400uJ
Source: Jaeger electronic catalog...... [more]
Jaeger electronic catalog 1999
Picture: -
advanced information for IGTM10N50A
OEM:General Elec... [more]
General Electric Co. GEC
Package: TO-3
datasheet (jpg):-
datasheet (pdf):-
complementary type:
-
similar type list:
-
similar type search:-

IGTM10N50A


SI N-IGBT transistor

Uce: 500V
Uge: 20V
Ic: 10A
N: 75W
Ton/Toff: 0.1/1.4µS
Tmax: -
the IGTM10N50A is a silicon IGBT transistor preferred for use in power applications-energy loss = 400uJ
Source: Jaeger electronic catalog...... [more]
Jaeger electronic catalog 1999
Picture: -
to the shop
advanced information for IGTM10N50A
OEM:General Elec... [more]
General Electric Co. GEC
Package: TO-3
datasheet (jpg):-
datasheet (pdf):-
complementary type:
-
similar type list:
-
similar type search:-

IGTM10N50A


SI N-IGBT transistor

Uce: 500V
Uge: 20V
Ic: 10A
N: 75W
Ton/Toff: 0.1/1.4µS
Tmax: -
the IGTM10N50A is a silicon IGBT transistor preferred for use in power applications-energy loss = 400uJ
Source: Jaeger electronic catalog...... [more]
Jaeger electronic catalog 1999
Picture: -
advanced information for IGTM10N50A
OEM:General Elec... [more]
General Electric Co. GEC
Package: TO-3
datasheet (jpg):-
datasheet (pdf):-
complementary type:
-
similar type list:
-
similar type search:-