| GT80J101
SI N-IGBT transistor | | | Uce: | 600V | | | Uge: | ±20V | | Ic: DC/AC | 80/160A | | N: | 200W | | Ton/Toff: | 500/700nS | | Tmax: | 150°C | | Picture: | - | | Source: | Toshiba IGBT Databook 199...... [more] Toshiba IGBT Databook 1995/96 | | | Advanced Information for GT80J101 | | OEM: | Toshiba Toky... [more] Toshiba Tokyo Shibaura Electric Co. Ltd. Japan | | Package: | 2-21F1C | | GT80J101 datasheet (jpg): | available | | GT80J101 datasheet (pdf): | available | complementary type:
| - | similar type list:
| - | | similar type search: | - | | | search a part: | search |
|
