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BUP314D


BUP314D


SI N-IGBT transistor

TO-3P
Uce: 1200V
Uge: 20V
Ic: 42A
N: 310W
Ton/Toff: 140/465nS
Tmax: -
the BUP314D is a silicon IGBT transistor preferred for use in general purpose applications-integrated diode
Source:Jaeger electronic catalog 1999
Picture:-
Advanced Information for: BUP314D
OEM:Siemens AG
Package: TO-3P
datasheet (jpg):-
datasheet (pdf):-
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